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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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112 pcs
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112 pcs | On Request | 1 | On Request | On Request | 0402 | On Request | On Request |
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The JAN2N3637L from Microchip Technology is a PNP silicon amplifier transistor. It is designed for through-hole mounting and comes in a TO-5 metal can package.
Key electrical characteristics include a maximum collector-emitter voltage of 175V and a continuous collector current of 1A. The device has a total power dissipation of 1W. It offers a minimum DC current gain (hFE) of 100 at 50mA and 10V, with a Vce saturation of 600mV maximum at 5mA base current and 50mA collector current.
This transistor operates within a wide temperature range of -65°C to 200°C. Its robust construction and specifications make it suitable for various amplification and switching applications where a reliable PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 175V.
The continuous collector current rating is 1A.
The total power dissipation is 1W.
The operating temperature range is -65°C to 200°C.
The JAN2N3637L is a PNP silicon amplifier transistor.
It is supplied in a TO-5 metal can package.
The JAN2N3637L is designed for through-hole mounting.