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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
325 pcs
|
325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
181 pcs
|
181 pcs | On Request | 1 | On Request | On Request | 1311 | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JAN2N3637 from Microchip Technology is a single PNP bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This component is designed for through-hole mounting and features a maximum continuous collector current of 1A and a collector-emitter voltage rating of 175V.
With a power dissipation of 1W, the JAN2N3637 is suitable for various general-purpose amplification and switching applications. It operates within a temperature range of -65°C to 200°C (TJ). The transistor exhibits a minimum DC current gain (hFE) of 100 at 50mA and 10V, with a Vce saturation of 600mV at 5mA and 50mA.
This device is identified by its part number JAN2N3637 and is also available under the distributor part number 1086-20890-ND. Its RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is Unaffected, though these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 175 V.
The continuous collector current rating is 1 A.
The power dissipation is 1 W.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N3637 is a PNP bipolar transistor.
It is supplied in a TO-39 (TO-205AD) package.
The JAN2N3637 is designed for through-hole mounting.