JAN2N3634 The Microchip Technology JAN2N3634 is a PNP bipolar transistor designed for through-hole mounting. It features a 140V collector-emitter breakdown voltage and a 1A collector current.
Mfr Part #:

JAN2N3634

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N3634 is a PNP bipolar transistor designed for through-hole mounting. It features a 140V collector-emitter breakdown voltage and a 1A collector current.
Total Stock: 4,782 pcs
$ Price Range: $0.99

JAN2N3634 Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,512 pcs
4512 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
270 pcs
270 pcs On Request 1 On Request On Request 1216 On Request On Request

JAN2N3634 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Packages
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JAN2N3634 Description

Short technical summary and product information.

The Microchip Technology JAN2N3634 is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-39 (TO-205AD) metal can package.

 

Key electrical characteristics include a maximum collector-emitter breakdown voltage of 140V and a maximum collector current of 1A. The transistor offers a maximum power dissipation of 1W. Its Vce saturation is specified at a maximum of 600mV at 5mA collector current and 50mA base current, with a minimum DC current gain (hFE) of 50 at 50mA collector current and 10V collector-emitter voltage.

 

The operating temperature range for this device is from -65°C to 200°C (TJ). The JAN2N3634 is specified with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status.

 

This component is ideal for applications requiring a robust PNP transistor with moderate voltage and current handling capabilities, packaged for through-hole assembly.

JAN2N3634 Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: Microchip Technology JAN2N3634 PNP Bipolar Transistor
Subcategory: Single

JAN2N3634 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N3634 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N3634 Features

  • PNP bipolar transistor type.
  • 140V collector-emitter breakdown voltage.
  • 1A maximum collector current.
  • 1W maximum power dissipation.
  • Through hole mounting in TO-39 package.

JAN2N3634 Applications

  • Suitable for general purpose amplification.
  • Used in switching applications.
  • Power control circuits.
  • Signal conditioning.

JAN2N3634 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the JAN2N3634?

The maximum collector-emitter breakdown voltage is 140V.

What is the maximum continuous collector current for this transistor?

The maximum continuous collector current is 1A.

What is the maximum power dissipation of the JAN2N3634?

The maximum power dissipation is 1W.

What is the operating temperature range?

The operating temperature range is -65°C to 200°C (TJ).

What package type is the JAN2N3634 supplied in?

It is supplied in a TO-39 (TO-205AD) package.

How is the JAN2N3634 mounted?

The JAN2N3634 is designed for through-hole mounting.

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