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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN2N3507 from Microchip Technology is a single NPN bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component is rated for a maximum collector-emitter voltage of 50V and can handle a continuous collector current of up to 3A, with a power dissipation of 1W. It features a minimum DC current gain (hFE) of 30 at 1.5A and 2V, and a Vce saturation of 1.5V maximum at 250mA and 2.5A.
With an operating temperature range of -65°C to 200°C (TJ), the JAN2N3507 is suitable for applications requiring robust thermal performance. The TO-39 package facilitates through-hole mounting on printed circuit boards. This transistor is specified with RoHS3 compliance and an MSL 1 rating.
This component is suitable for various switching and amplification tasks in electronic circuits where its specific voltage, current, and gain characteristics are required. Its construction and specifications make it a reliable choice for applications demanding a durable NPN transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The continuous collector current rating is 3A.
The power dissipation is 1W.
The minimum DC current gain (hFE) is 30 at 1.5A and 2V.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N3507 is supplied in a TO-39 (TO-205AD) metal can package.
The JAN2N3507 is mounted using the through-hole method.