BC817-25,215
Nexperia USA Inc.
NPN general-purpose transistor, 45V VCEO, 500mA collector current, 100MHz transition frequency, in SOT23 surface-mount package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN2N335 from Microchip Technology is a single NPN bipolar junction transistor (BJT). This component is characterized by a maximum collector-emitter breakdown voltage of 45V and a continuous collector current rating of 10mA.
As a bipolar transistor, the JAN2N335 operates by controlling a larger collector current with a smaller base current. Its NPN configuration means it uses a positive base-emitter voltage to turn on, allowing current to flow from collector to emitter.
This transistor is suitable for various electronic switching and amplification circuits where low current and moderate voltage handling are required. Its specifications suggest applications in signal processing or low-power control systems.
While specific package and mounting details are not provided in the available data, components of this type are typically available in through-hole or surface-mount packages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the JAN2N335 is 45V.
The JAN2N335 has a maximum collector current of 10mA.
The JAN2N335 is an NPN bipolar transistor.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
