| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microsemi Corporation JAN2N3251A is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-39 (TO-205AD) metal can package and designed for through-hole mounting.
Key electrical specifications include a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 200mA. The transistor offers a minimum DC current gain (hFE) of 100 at 10mA and 1V, with a Vce saturation of 500mV at 5mA/50mA. The operating temperature range is from -65°C to 200°C (TJ).
This component is qualified under MIL-PRF-19500/323, indicating its suitability for military applications. The RoHS status is reported as RoHS3 compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum continuous collector current is 200mA.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N3251A is supplied in a TO-205AD, TO-39-3 Metal Can package.
The JAN2N3251A is mounted using the Through Hole method.
The minimum DC current gain (hFE) is 100 at 10mA and 1V.
The RoHS status is RoHS3 Compliant.