| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN2N3250A from Microchip Technology is a single PNP bipolar junction transistor (BJT) suitable for through-hole mounting. This component features a maximum collector-emitter voltage of 60V and can handle a continuous collector current of up to 200mA. It is rated for a power dissipation of 360mW.
The transistor exhibits a minimum DC current gain (hFE) of 50 at 10mA and 1V. Its saturation voltage (Vce Sat) is a maximum of 500mV at 5mA and 50mA. The operating temperature range for this device is from -65°C to 200°C (TJ).
The JAN2N3250A comes in a TO-39 (TO-205AD) metal can package. It is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited, and REACH Unaffected. This transistor is designed for applications requiring a general-purpose PNP device with moderate voltage and current capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 60 V.
The continuous collector current is 200 mA.
The operating temperature range is -65°C to 200°C (TJ).
The JAN2N3250A is available in a TO-39 (TO-205AD) metal can package.