| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The JAN2N3055 from Microchip Technology is a single NPN bipolar junction transistor (BJT) housed in a TO-3 package. This device is designed for power applications, offering a maximum collector-emitter voltage of 70V and a continuous collector current of 15A.
Key electrical characteristics include a power dissipation rating of 6W and a minimum DC current gain (hFE) of 20 at 4A collector current and 4V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 2V at 3.3A base current and 10A collector current.
This transistor is suitable for through-hole mounting and operates within a wide temperature range of -65°C to 200°C (TJ). Its robust construction and specifications make it a reliable choice for various power switching and amplification circuits.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are unverified from the manufacturer's documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 70V.
The continuous collector current rating is 15A.
The package type is TO-3.
It is mounted using the through-hole method.
The operating temperature range is -65°C to 200°C (TJ).
