| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,000 pcs
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13000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The JAN2N2907A from Microchip Technology is a single PNP bipolar junction transistor (BJT) housed in a TO-18 metal can package. This component is designed for through-hole mounting and offers a maximum voltage rating of 60V and a continuous collector current of 600mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation voltage of 1.6V at 50mA and 500mA. The transistor operates within a wide temperature range of -65°C to 200°C (TJ), with a power dissipation of 500mW.
This transistor is suitable for various general-purpose amplification and switching applications where a PNP type is required. Its robust TO-18 package and specified operating parameters make it a reliable choice for designs needing a discrete PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage for the JAN2N2907A transistor is 60V.
The continuous collector current for the JAN2N2907A is 600mA.
The operating temperature range for the JAN2N2907A is -65°C to 200°C (TJ).
The JAN2N2907A is available in a TO-18 (TO-206AA) metal can package.
The JAN2N2907A transistor is mounted using the Through Hole method.