SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 8746 | On Request | On Request |
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The JAN2N2369A is an NPN bipolar junction transistor manufactured by Microchip Technology. This component is designed for various electronic applications requiring reliable transistor performance.
Key electrical specifications include a maximum power dissipation of 360mW, a collector-emitter breakdown voltage of 15V, and a minimum DC current gain (hFE) of 20 at 100mA and 1V. The saturation voltage (Vce) is a maximum of 450mV at 10mA collector current and 100mA base current. The maximum collector cutoff current is 400nA.
This transistor operates within a wide temperature range of -65°C to 200°C (TJ). It is housed in a TO-18 Metal Can package and features a through-hole mounting type, making it suitable for through-hole PCB assembly.
The JAN2N2369A is qualified under MIL-PRF-19500/317 and is designated as a military-grade component.
| Qty | Low | High |
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| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum power dissipation is 360mW.
The maximum collector-emitter breakdown voltage is 15V.
The operating temperature range is -65°C to 200°C.
The JAN2N2369A is an NPN bipolar junction transistor.
The JAN2N2369A is supplied in a TO-18 Metal Can package.
The minimum DC current gain (hFE) is 20 at 100mA collector current and 1V collector-emitter voltage.
