| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,569 pcs
|
3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The JAN2N2369A is a military-grade NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for applications requiring a breakdown voltage of up to 15V and can handle a maximum power dissipation of 360mW. The transistor features a minimum DC current gain (hFE) of 20 at 100mA and 1V, with a Vce saturation of 450mV maximum at 10mA and 100mA.
This component operates within a wide temperature range of -65°C to 200°C (TJ). It is housed in a TO-18 metal can package, specifically designated as TO-206AA, TO-18-3. The mounting type is through-hole, making it suitable for traditional PCB assembly.
The JAN2N2369A has a collector cutoff current of 400nA maximum. Its compliance status indicates RoHS non-compliance and REACH unaffected. The Moisture Sensitivity Level (MSL) is 1 (Unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the JAN2N2369A is 15V.
The maximum power dissipation for the JAN2N2369A is 360mW.
The JAN2N2369A operates from -65°C to 200°C (TJ).
The JAN2N2369A is supplied in a TO-18 metal can package, designated as TO-206AA, TO-18-3.
The minimum DC current gain (hFE) for the JAN2N2369A is 20 at 100mA and 1V.
The Vce saturation voltage for the JAN2N2369A is 450mV maximum at 10mA and 100mA.