| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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202 pcs
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202 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The JAN2N1893S from Raytheon is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-39 (TO-205AD) package, designed for through-hole mounting.
Key electrical characteristics include a continuous collector current of 500 mA and a collector-emitter voltage rating of 80V. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V. Its typical saturation voltage (Vce) is 5V at 15mA and 150mA. The device can dissipate up to 3W of power.
This component meets the MIL-PRF-19500/182 military standard. It operates within a wide temperature range of -65°C to 200°C.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. The JAN2N1893S is a reliable choice for applications requiring a general-purpose NPN transistor with robust specifications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-65°C to 200°C.
TO-39 (also designated TO-205AD).
80V.
500mA.
3W.
40 at 150mA and 10V.
MIL-PRF-19500/182.