Mfr Part #:

JAN2N1893

Mfr Name: Raytheon

The RAYTHEON JAN2N1893 is an NPN bipolar transistor designed for low power applications. It features a VCEO of 80V and a collector current of 500mA.

✓ Total Stock: 192 pcs

$ Price Range: $0.99

JAN2N1893 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	192 pcs On Request	192 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

JAN2N1893 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Raytheon

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JAN2N1893 Description

Short technical summary and product information.

The RAYTHEON JAN2N1893 is a qualified NPN low power silicon transistor. It is designed to meet the stringent requirements of MIL-PRF-19500/182, with a qualified level of JANTX.

Key electrical characteristics include a Collector-Emitter Breakdown Voltage (VCEO) of 80 Vdc and a Collector Current (IC) of up to 500 mAdc. The transistor exhibits a minimum Forward-Current Transfer Ratio (hFE) ranging from 20 to 120 depending on the operating conditions. Its Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 5.0 Vdc, and the Base-Emitter Voltage (VBE(sat)) is a maximum of 1.3 Vdc.

In terms of thermal performance, the JAN2N1893 has a maximum power dissipation of 0.5W at TA = +25°C and 1.8W at TC = +25°C. The junction-to-case thermal resistance (RθJC) is 97 0C/W for the 2N720A and 58 0C/W for the 2N1893, S. The operating and storage junction temperature range is from -65°C to +200°C.

This transistor is available in a TO-5 package or a TO-18 (TO-206AA) package. It is suitable for various electronic applications requiring a reliable NPN transistor with military-grade qualification.

JAN2N1893 Quick Information

Product Type: Bipolar Transistor

Series: JAN

Canonical Name: JAN2N1893 NPN Low Power Silicon Transistor

Subcategory: NPN

JAN2N1893 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

JAN2N1893 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N1893 Features

Qualified per MIL-PRF-19500/182
NPN low power silicon transistor
80 Vdc Collector-Emitter Voltage (VCEO)
500 mAdc maximum Collector Current (IC)
Available in TO-5 and TO-18 packages

JAN2N1893 Applications

Suitable for general purpose amplification
Used in low power switching circuits
Ideal for high-reliability applications
Designed for military-grade requirements

JAN2N1893 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the Collector-Emitter Breakdown Voltage (VCEO) for the JAN2N1893?

The minimum Collector-Emitter Breakdown Voltage (VCEO) for the JAN2N1893 is 80 Vdc.

What is the maximum Collector Current (IC) for the JAN2N1893?

The maximum Collector Current (IC) for the JAN2N1893 is 500 mAdc.

What is the operating and storage junction temperature range for the JAN2N1893?

The operating and storage junction temperature range for the JAN2N1893 is -65 to +200 0C.

What package types are available for the JAN2N1893?

The JAN2N1893 is available in TO-5 and TO-18 (TO-206AA) packages.

What is the Forward-Current Transfer Ratio (hFE) at IC = 10 mAdc and VCE = 10 Vdc?

The minimum Forward-Current Transfer Ratio (hFE) at IC = 10 mAdc and VCE = 10 Vdc is 35.

What is the Collector-Emitter Saturation Voltage (VCE(sat))?

The maximum Collector-Emitter Saturation Voltage (VCE(sat)) is 5.0 Vdc at IC = 150 mAdc and IB = 15 mAdc.

What is the Turn-On Time + Turn-Off Time?

The maximum Turn-On Time + Turn-Off Time is 30 ηs.