| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
66 pcs
|
66 pcs | On Request | 1 | On Request | On Request | 6731 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JAN2N1893 is a qualified NPN low power silicon transistor manufactured by CCSD. It is designed for various electronic applications requiring reliable switching and amplification.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 80 Vdc and a maximum Collector Current (IC) of 500 mAdc. The transistor offers a Forward-Current Transfer Ratio (hFE) ranging from 20 to 120 depending on the operating conditions. Its Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 5.0 Vdc, and the Base-Emitter Voltage (VBE(sat)) is 1.3 Vdc.
This device operates within a wide junction temperature range of -65 to +200 °C. The JAN2N1893 is housed in a TO-5 package, suitable for through-hole mounting.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. This transistor is qualified per MIL-PRF-19500/182.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Breakdown Voltage (VCER) for the JAN2N1893 is 100 Vdc, with RBE = 10 Ω.
The JAN2N1893 has a maximum Collector Current (IC) of 500 mAdc.
The operating and storage junction temperature range for the JAN2N1893 is -65 to +200 °C.
The JAN2N1893 is supplied in a TO-5 package.
The maximum Total Power Dissipation (PT) for the JAN2N1893 is 0.5 W at TA = +25°C and 1.8 W at TC = +25°C.
The typical Thermal Resistance, Junction-to-Case (RθJC) for the JAN2N1893 is 58 °C/W.
The maximum Collector-Emitter Saturation Voltage (VCE(sat)) for the JAN2N1893 is 5 Vdc when IC = 150 mAdc and IB = 15 mAdc.