JAN2N1893 The JAN2N1893 is an NPN low power silicon transistor from CCSD. It features a VCEO of 80V and a collector current of 500mA.
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JAN2N1893

Available from 1 distributors
Mfr Name: CCSD
CCSD
The JAN2N1893 is an NPN low power silicon transistor from CCSD. It features a VCEO of 80V and a collector current of 500mA.
✓ Total Stock: 66 pcs
$ Price Range: $0.99

JAN2N1893 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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66 pcs
66 pcs On Request 1 On Request On Request 6731 On Request On Request

JAN2N1893 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Military Grade

JAN2N1893 Description

Short technical summary and product information.

The JAN2N1893 is a qualified NPN low power silicon transistor manufactured by CCSD. It is designed for various electronic applications requiring reliable switching and amplification.

 

Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 80 Vdc and a maximum Collector Current (IC) of 500 mAdc. The transistor offers a Forward-Current Transfer Ratio (hFE) ranging from 20 to 120 depending on the operating conditions. Its Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 5.0 Vdc, and the Base-Emitter Voltage (VBE(sat)) is 1.3 Vdc.

 

This device operates within a wide junction temperature range of -65 to +200 °C. The JAN2N1893 is housed in a TO-5 package, suitable for through-hole mounting.

 

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. This transistor is qualified per MIL-PRF-19500/182.

JAN2N1893 Quick Information

Product Type: NPN Transistor
Canonical Name: JAN2N1893 NPN Low Power Silicon Transistor
Subcategory: Single

JAN2N1893 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N1893 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N1893 Features

  • NPN low power silicon transistor.
  • 80V Collector-Emitter Voltage (VCEO).
  • 500mA maximum Collector Current (IC).
  • TO-5 package for through-hole mounting.
  • Qualified per MIL-PRF-19500/182.

JAN2N1893 Applications

  • Suitable for general amplification tasks.
  • Used in low power switching circuits.
  • Ideal for signal processing applications.
  • Component in MIL-spec electronic systems.

JAN2N1893 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Collector-Emitter Breakdown Voltage of the JAN2N1893?

The maximum Collector-Emitter Breakdown Voltage (VCER) for the JAN2N1893 is 100 Vdc, with RBE = 10 Ω.

What is the maximum Collector Current for the JAN2N1893?

The JAN2N1893 has a maximum Collector Current (IC) of 500 mAdc.

What is the operating temperature range for the JAN2N1893?

The operating and storage junction temperature range for the JAN2N1893 is -65 to +200 °C.

What is the package type of the JAN2N1893?

The JAN2N1893 is supplied in a TO-5 package.

What is the maximum power dissipation of the JAN2N1893?

The maximum Total Power Dissipation (PT) for the JAN2N1893 is 0.5 W at TA = +25°C and 1.8 W at TC = +25°C.

What is the typical Thermal Resistance, Junction-to-Case for the JAN2N1893?

The typical Thermal Resistance, Junction-to-Case (RθJC) for the JAN2N1893 is 58 °C/W.

What is the maximum Collector-Emitter Saturation Voltage for the JAN2N1893?

The maximum Collector-Emitter Saturation Voltage (VCE(sat)) for the JAN2N1893 is 5 Vdc when IC = 150 mAdc and IB = 15 mAdc.

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