| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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97 pcs
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97 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JAN2N1890S from Microchip Technology is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. This component offers a collector-emitter breakdown voltage of 80V and can handle a maximum continuous collector current of 500mA. Its maximum power dissipation is rated at 800mW.
Designed for through-hole mounting, the JAN2N1890S comes in a TO-39 (TO-205AD) metal can package. It operates within a temperature range of -65°C to 200°C. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 5V maximum at 15mA and 150mA. The collector cutoff current (ICBO) is a maximum of 10nA.
This transistor is specified with a RoHS3 compliant status and an MSL of 1. Its robust construction and electrical characteristics make it a reliable choice for circuit designs requiring a general-purpose NPN transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 80V.
The maximum continuous collector current is 500mA.
The maximum power dissipation is 800mW.
The operating temperature range is -65°C to 200°C.
It is supplied in a TO-39 (TO-205AD) metal can package.
The JAN2N1890S is designed for through-hole mounting.