| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 133 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Transistor Type |
The JAN2N1714 from Microsemi Corporation is a single NPN bipolar junction transistor. It is constructed with silicon for reliable performance in various electronic circuits.
This transistor offers a collector-emitter breakdown voltage of up to 60V and can handle a maximum collector current of 750mA. It operates at a maximum junction temperature of 175°C.
The JAN2N1714 is designed for through-hole mounting and comes in a TO-205AA, TO-5-3 Metal Can package. Its bulk packaging is suitable for various production volumes.
This component is categorized under Single Bipolar Transistors, specifically as an NPN type, making it suitable for amplification and switching applications where its specific voltage and current ratings are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum collector current is 750mA.
The operating temperature is 175°C.
The JAN2N1714 is supplied in a TO-205AA, TO-5-3 Metal Can package.
The JAN2N1714 is mounted using the through-hole method.