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JAN2N1714 The Microchip Technology JAN2N1714 is an NPN silicon transistor designed for low power applications. It features a 60V collector-emitter breakdown voltage and a maximum collector current of 750mA.
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JAN2N1714

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JAN2N1714 is an NPN silicon transistor designed for low power applications. It features a 60V collector-emitter breakdown voltage and a maximum collector current of 750mA.
✓ Total Stock: 3,600 pcs
$ Price Range: $0.99

JAN2N1714 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
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JAN2N1714 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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JAN2N1714 Description

Short technical summary and product information.

The JAN2N1714 from Microchip Technology is a single NPN bipolar junction transistor. It is designed for low power applications and offers a collector-emitter breakdown voltage of up to 60V and a maximum collector current of 750mA.

 

This transistor is housed in a TO-205AA, TO-5-3 Metal Can package, suitable for through-hole mounting. The operating temperature range extends up to 175°C (TJ).

 

Key electrical characteristics include its NPN transistor type, 60V breakdown voltage, and 750mA current handling capability. Its through-hole mounting and metal can package make it suitable for various electronic circuits where discrete transistors are required.

JAN2N1714 Quick Information

Product Type: NPN Transistor
Canonical Name: JAN2N1714 NPN Transistor
Subcategory: Single

JAN2N1714 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N1714 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N1714 Features

  • NPN silicon transistor for low power.
  • 60V collector-emitter breakdown voltage.
  • 750mA maximum collector current.
  • Through-hole mounting package.
  • Operates up to 175°C.

JAN2N1714 Applications

  • Used in low power switching circuits
  • Suitable for signal amplification
  • Ideal for high-temperature environments
  • Compatible with standard TO-5 packages

JAN2N1714 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage is 60V.

What is the maximum collector current?

The maximum collector current is 750mA.

What is the operating temperature range?

The operating temperature is 175°C.

What type of transistor is the JAN2N1714?

The JAN2N1714 is an NPN transistor.

What package is the JAN2N1714 supplied in?

It is supplied in a TO-205AA, TO-5-3 Metal Can package.

How is the JAN2N1714 mounted?

It is mounted using the through-hole method.

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