| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor (BJT) from Microchip Technology, part number JAN2N1711, is designed for general-purpose applications. It features a maximum collector current of 500 mA and a collector-emitter voltage rating of 30 V. The transistor can dissipate up to 800 mW of power and operates across a wide temperature range from -65°C to 200°C.
Packaged in a TO-5 metal can (TO-205AA), this component is designed for through-hole mounting. It exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 1.5V at 15mA and 150mA. The RoHS status is compliant, and it has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JAN2N1711 transistor has a voltage rating of 30 V.
The JAN2N1711 transistor can handle a maximum continuous current of 500 mA.
The power dissipation for the JAN2N1711 transistor is 800 mW.
The JAN2N1711 transistor operates in a temperature range of -65°C to 200°C.
The JAN2N1711 transistor is available in a TO-205AA, TO-5-3 Metal Can package, also referred to as TO-5.
The JAN2N1711 transistor is designed for through-hole mounting.