CDR32BP680BKUR/M500
Kyocera AVX
The Kyocera AVX CDR32BP680BKUR/M500 is a ceramic capacitor. It features RoHS3 compliance and an MSL 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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275 pcs
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275 pcs | On Request | 1 | On Request | On Request | 7730 | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade |
The JAN2N1613 from CRP is a qualified NPN low power silicon transistor. It is designed for various electronic applications requiring a reliable bipolar junction transistor.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 30V, a collector-base voltage (VCBO) of 75V, and an emitter-base voltage (VEBO) of 7.0V. The maximum collector current (IC) is 500mA. The transistor offers a forward current transfer ratio (hFE) ranging from 20 to 120 depending on the operating conditions.
This transistor is housed in a TO-39 (TO-205AD) package, suitable for through-hole mounting. It operates within a junction temperature range of -55 to +175 C. The JAN2N1613 is qualified per MIL-PRF-19500/181, indicating its suitability for demanding applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the JAN2N1613 is 30 Vdc.
The maximum collector current (IC) for the JAN2N1613 is 500 mAdc.
The JAN2N1613 transistor is supplied in a TO-39 package.
The operating and storage junction temperature range for the JAN2N1613 is -55 to +175 C.
The minimum forward current transfer ratio (hFE) for the JAN2N1613 at IC = 150 mAdc and VCE = 10 Vdc is 40.
The collector-emitter saturation voltage (VCE(sat)) for the JAN2N1613 at IC = 150 mAdc and IB = 15 mAdc is a maximum of 1.5 Vdc.
The combined turn-on and turn-off time (t_on + t_off) for the JAN2N1613 is a maximum of 30 ηs.