| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology JAN2N1613 is a single NPN bipolar junction transistor (BJT) designed for general-purpose applications. It features a collector-emitter breakdown voltage of 30V and can handle a maximum collector current of 500mA. The transistor has a maximum power dissipation of 800mW and a minimum DC current gain (hFE) of 40 at 150mA and 10V.
This component operates within a wide temperature range, from -65°C to 200°C (TJ), making it suitable for demanding environments. The saturation voltage (Vce Sat) is a maximum of 1.5V at 15mA base current and 150mA collector current. The collector cutoff current (ICBO) is a maximum of 10μA.
The JAN2N1613 is packaged in a TO-205AD, TO-39-3 Metal Can and utilizes a through-hole mounting type. Its military grade qualification (MIL-PRF-19500/181) suggests reliability for critical applications. This transistor is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the JAN2N1613 is 30V.
The JAN2N1613 transistor is supplied in a TO-205AD, TO-39-3 Metal Can package.
The operating temperature range for the JAN2N1613 transistor is -65°C to 200°C (TJ).
The JAN2N1613 transistor is RoHS3 compliant.