| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
47 pcs
|
47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Diode Type | |
| Reverse Recovery Time (trr) |
The JAN1N5804US from Sensitron Semiconductor is a silicon rectifier diode. It is designed for applications requiring ultra-fast recovery times, with a specified reverse recovery time of 25 ns.
This diode has an average rectified current rating of 2.5A and a maximum repetitive peak reverse voltage of 100V. The forward voltage drop is a maximum of 975mV at 2.5A. It also exhibits a low reverse leakage current of 1µA at 100V.
The component is housed in a D-5A package, described as hermetically sealed glass MELF-2, suitable for bulk packaging. The terminal form is wrap around and the terminal position is at the end. The package body material is glass.
Key electrical characteristics include a capacitance of 25pF at 10V and 1MHz. The diode element material is silicon.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The average rectified current (Io) for the JAN1N5804US is 2.5A.
The maximum repetitive peak reverse voltage for the JAN1N5804US is 100V.
The reverse recovery time (trr) for the JAN1N5804US is 25ns.
The maximum forward voltage (Vf) at 2.5A for the JAN1N5804US is 975mV.
The JAN1N5804US is supplied in a D-5A package, described as hermetically sealed glass MELF-2.