| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
454 pcs
|
454 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Type | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| SVHC Present | |
| Supplier Device Package |
The JAN1N4150-1 from Unitrode is a silicon signal diode designed for general-purpose applications. It features a maximum reverse voltage rating of 75V and can handle an average forward current of up to 0.3A. The diode exhibits a maximum forward voltage of 1V at 200mA and a reverse leakage current of 100nA at 50V.
This component is packaged in a hermetically sealed glass DO-35 case with axial wire terminals, suitable for through-hole mounting. Its specifications include a maximum power dissipation of 0.5W and a maximum reverse recovery time of 4ns. The JAN1N4150-1 is a reliable choice for signal processing and switching applications where these electrical characteristics are critical.
Key electrical parameters include a maximum forward voltage of 1V at 200mA and a low reverse leakage current of 100nA at 50V. The diode's silicon construction ensures efficient operation. The DO-35 package is a standard for through-hole components, facilitating easy integration into circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the JAN1N4150-1 is 75V.
The maximum average forward current for the JAN1N4150-1 is 0.3A.
The JAN1N4150-1 is supplied in a DO-35 package.
The maximum forward voltage for the JAN1N4150-1 at 200mA is 1V.
The reverse leakage current for the JAN1N4150-1 at 50V is 100nA.