JTX2N2907A
Motorola Semicondutor
The JTX2N2907A is a single bipolar junction transistor manufactured by Motorola Semiconductor. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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585 pcs
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585 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JAN1N3070 is a single switching diode manufactured by Texas Instruments. This component is designed for various electronic applications requiring reliable diode functionality.
Key electrical specifications include a peak reverse repetitive voltage rating of 175V, a maximum continuous forward current of 0.1A, and a peak non-repetitive surge current of 2A. The diode exhibits a peak forward voltage of 1V and a peak reverse current of 0.1uA. Its maximum power dissipation is rated at 500mW, with a peak reverse recovery time of 50ns.
The JAN1N3070 is housed in a DO-7 package, a common form factor for through-hole diodes. This package type facilitates easy integration into circuit boards for various applications. The component has a pin count of 2, typical for single diodes.
This diode is classified as a switching diode, indicating its suitability for applications involving rapid switching operations. Its specifications make it a versatile component for general-purpose rectification and signal switching tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JAN1N3070 has a peak reverse repetitive voltage of 175 V.
The maximum continuous forward current is 0.1 A.
The peak forward voltage is 1 V.
The peak reverse recovery time is 50 ns.
The JAN1N3070 is supplied in a DO-7 through-hole package.
The maximum power dissipation is 500 mW.
The peak non-repetitive surge current is 2 A.
