| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Diode Type | |
| Lead Style | |
| Military Grade | |
| SVHC Present | |
| Tape & Reel |
The JAN1N1126A from Microsemi Corporation is a silicon rectifier diode designed for power applications. This component offers an average forward current of 3.3 A and a maximum repetitive peak reverse voltage of 400 V.
It is housed in a DO-203AA package with a post/stud mount style, utilizing a metal body and solder lug terminals with tin-lead finish. The diode is configured as a single element.
This rectifier diode is suitable for various power supply and power management circuits where reliable rectification is required. Its robust construction and electrical characteristics make it a dependable choice for industrial and defense applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The average forward current is 3.3 A.
The maximum repetitive peak reverse voltage is 400 V.
It is a silicon rectifier diode.
The JAN1N1126A is supplied in a DO-203AA package.
It is a post/stud mount component.