| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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181 pcs
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181 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BLF7G24L-100G from NXP Semiconductors is an N-Channel RF Power MOSFET utilizing Metal-Oxide Semiconductor FET technology. It is designed for amplifier applications and operates within the 2.3GHz to 2.4GHz frequency range.
Key electrical specifications include a maximum drain current of 28A and a minimum breakdown voltage of 65V. The device offers a typical gain of 18dB and an output power of 20W. It is supplied in a SOT-502A package, suitable for surface mounting, and is available on tape and reel.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. The REACH status is unaffected. The part is lead-free, aligning with environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the BLF7G24L-100G is 28A.
The minimum breakdown voltage (DS Breakdown Voltage-Min) for the BLF7G24L-100G is 65V.
The BLF7G24L-100G is an RF Power MOSFET with an N-Channel type.
The BLF7G24L-100G operates in the frequency range of 2.3GHz to 2.4GHz.
The BLF7G24L-100G is supplied in a SOT-502A package.
Yes, the BLF7G24L-100G is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the BLF7G24L-100G is 1.