| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,000 pcs
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16000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The J211-D74Z from ON Semiconductor is an N-Channel JFET designed for RF amplifier and mixer applications, particularly where process 50 is not adequate. It offers sufficient gain and low noise for sensitive receiver designs.
Key electrical characteristics include a drain-gate voltage rating of 25V and a gate-source voltage rating of -25V. The device can handle a forward gate current of up to 10mA. Its zero-gate voltage drain current (IDSS) ranges from 7.0mA to 20mA, with a common source forward transconductance (gfs) between 7000 and 12000 μmhos at 1.0 kHz.
This JFET is supplied in a TO-92-3 package, suitable for through-hole mounting. The operating and storage junction temperature range is from -55°C to 150°C. The device is sourced from process 90 and is designed for applications requiring reliable performance in HF/VHF frequency ranges.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-gate voltage rating is 25V.
The gate-source voltage rating is -25V.
The maximum forward gate current is 10mA.
The operating and storage junction temperature range is -55°C to 150°C.
The zero-gate voltage drain current (IDSS) ranges from 7.0mA to 20mA.
The common source forward transconductance (gfs) is between 7000 and 12000 μmhos.
The J211-D74Z is supplied in a TO-92-3 package.
