| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,728 pcs
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1728 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This P-Channel JFET, part number J177 from On Semiconductor, is designed for applications such as low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. It operates with a drain-gate voltage of up to 30V and a gate-source voltage of 30V. The device offers a maximum power dissipation of 350 mW and a junction temperature range of -55°C to 150°C.
The J177 is housed in a TO-92-3 package, suitable for through-hole mounting. Key electrical characteristics include a zero-gate voltage drain current of -20 mA at -15V, a drain-source on-resistance of 300 Ω under specific conditions, and a gate-source cutoff voltage of 2.5V. The thermal resistance from junction to ambient is 357 °C/W.
This JFET is sourced from Process 88 and is marked with '6W', '6X', or '6Y' depending on the specific variant. Its P-channel nature and specific electrical parameters make it suitable for precise analog signal control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-gate voltage (VDG) for the J177 is -30 V.
The J177 has a maximum power dissipation (PD) of 350 mW.
The J177 can be operated and stored within a temperature range of -55°C to 150°C.
The J177 is available in a TO-92-3 package.
The drain-source on-resistance (rDS(on)) for the J177 is 300 Ω.
The gate-source cutoff voltage (VGS(off)) for the J177 is 2.5 V.