| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,350 pcs
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7350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The J176 is a P-Channel Junction Field-Effect Transistor (JFET) manufactured by On Semiconductor. This device is specifically designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. It offers a drain-gate voltage of -30V and a gate-source voltage of 30V.
The J176 features a maximum power dissipation of 350 mW at 25°C and operates within a junction temperature range of -55°C to 150°C. The transistor has a typical drain-source on-resistance of 250 Ohms and a gate-source cutoff voltage of 2.5V (for J177, typical values for J176 may vary).
Packaged in a TO-92-3 (TO-226-3) through-hole configuration, the J176 is suitable for various electronic designs. Its electrical characteristics, including a zero-gate voltage drain current of up to -100 mA and a gate-source breakdown voltage of 30V, make it a versatile component for analog signal processing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating and storage junction temperature range for the J176 is -55°C to 150°C.
The J176 JFET is available in a TO-92-3 package.
The J176 JFET is RoHS3 Compliant.
The maximum power dissipation for the J176 JFET is 350 mW at 25°C.
The typical drain-source on-resistance for the J176 JFET is 250 Ohms.
The typical gate-source cutoff voltage for the J176 JFET is 2.5V.