| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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53,620 pcs
|
53620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor J174 is a P-Channel Junction Field-Effect Transistor (JFET) designed for applications such as low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. It is sourced from Process 88.
This JFET features a maximum drain-gate voltage of -30V and a gate-source voltage of 30V. The continuous drain current is rated at 20mA at 15V, with a maximum drain-source on-resistance of 85 Ohms when VGS is 0. The device operates over a wide temperature range of -55°C to 150°C.
The J174 is available in a TO-92-3 package, suitable for through-hole mounting. Its power dissipation is 350 mW at 25°C ambient temperature, with a derating of 2.8 mW/°C above that temperature. The junction-to-case thermal resistance is 125 °C/W, and the junction-to-ambient thermal resistance is 357 °C/W.
Key electrical characteristics include a gate-source breakdown voltage of 30V and a gate reverse current of 1.0 nA. The gate-source cutoff voltage (VGS(off)) is a maximum of 5.0V under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-gate voltage (VDG) for the J174 is -30 V.
The continuous drain current (IDSS) for the J174 is a maximum of -100 mA at VDS = -15 V and IGS = 0.
The drain-source on-resistance (rDS(on)) for the J174 is a maximum of 85 Ω when VDS ≤ 0.1 V and VGS = 0.
The J174 operates and stores between -55°C and +150°C.
The J174 is available in a TO-92-3 package.