| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,020 pcs
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8020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The J113 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by ON Semiconductor. This device is specifically designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers.
Key electrical characteristics include a drain-gate voltage rating of 35V and a gate-source voltage rating of -35V. The device can handle a forward gate current of up to 50mA. It offers a zero-gate voltage drain current (IDSS) of 2mA at 15V drain-source voltage and a drain-source on resistance (rDS(on)) of 100 Ω maximum.
The J113 operates within a wide temperature range of -55°C to 150°C (TJ). It is housed in a TO-92 package, a common through-hole mounting type suitable for various circuit designs. The device's power dissipation is rated at 625 mW.
This JFET is sourced from Process 51 and features interchangeable source and drain terminals. It is also noted as a Pb-Free device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-gate voltage for the J113 JFET is 35V.
The J113 JFET operates from -55°C to 150°C.
The J113 JFET is available in a TO-92-3 package.
The J113 JFET is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the J113 JFET is 1.
The zero-gate voltage drain current (IDSS) for the J113 is 2mA at 15V.
The drain-source on resistance (rDS(on)) for the J113 is a maximum of 100 Ω.