| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60,168 pcs
|
60168 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
6,188 pcs
|
6188 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The ON Semiconductor J112-D74Z is an N-Channel Junction Field-Effect Transistor (JFET) designed for various electronic applications. It offers a breakdown voltage of 35V and a maximum power dissipation of 625mW, making it suitable for signal amplification and switching tasks.
This JFET operates within a temperature range of -55°C to 150°C (TJ). The device features a drain current (Idss) of 5mA at 15V and a cutoff voltage (VGS off) of 1V at 1µA. Its resistance (RDS(On)) is rated at 50 Ohms.
The J112-D74Z is packaged in a TO-226-3, TO-92-3 (TO-226AA) configuration with formed leads, designed for through-hole mounting. It adheres to RoHS3 compliance standards.
This component is ideal for designers seeking a reliable N-Channel JFET for general-purpose analog signal processing and switching circuits where its specific electrical characteristics and package type are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The J112-D74Z has a breakdown voltage of 35V.
The J112-D74Z has a maximum power dissipation of 625mW.
The operating temperature range is -55°C to 150°C (TJ).
The J112-D74Z is supplied in a TO-226-3, TO-92-3 (TO-226AA) Formed Leads package.
The J112-D74Z is designed for through-hole mounting.
The J112-D74Z is RoHS3 Compliant.