| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
54,615 pcs
|
54615 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
14,000 pcs
|
14000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| FET Type | |
| Mounting Type | |
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| Supplier Device Package | |
| Voltage |
The J111-D74Z from ON Semiconductor is an N-Channel Junction Field-Effect Transistor (JFET) designed for various electronic applications. It features a breakdown voltage of 35V and a maximum power dissipation of 625mW. The JFET operates with a drain current of 20mA at 15V and has a cutoff voltage of 3V at 1µA.
This component is suitable for applications requiring specific switching or amplification characteristics. The ON Semiconductor J111-D74Z is housed in a standard TO-92-3 package, facilitating through-hole mounting on printed circuit boards. Its operating temperature range is from -55°C to 150°C (TJ), ensuring reliability in diverse environmental conditions.
Key electrical parameters include a 30 Ohm resistance when on and an N-Channel FET type. The J111-D74Z is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances. Its through-hole mounting makes it a versatile choice for board-level designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (V(BR)GSS) for the J111-D74Z is 35V.
The J111-D74Z has a maximum power dissipation of 625mW.
The operating temperature range for the J111-D74Z is -55°C to 150°C (TJ).
The J111-D74Z is designed for through-hole mounting.
The J111-D74Z is supplied in a TO-92-3 package.