| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| FET Type | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Resistance | |
| Supplier Device Package | |
| Voltage |
The J111-D26Z from On Semiconductor is an N-Channel Junction Field-Effect Transistor (JFET) designed for various electronic applications. This component features a breakdown voltage of 35V and a drain current of 20mA at 15V Vds. It has a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C.
The J111-D26Z is housed in a TO-92-3 package, suitable for through-hole mounting. Its electrical characteristics include a gate-source cutoff voltage of 3V at 1µA and an on-resistance of 30 Ohms. The RoHS status is compliant with RoHS3 standards, and it is REACH unaffected.
This JFET is a discrete semiconductor component suitable for applications requiring specific switching or amplification characteristics. Its robust operating temperature range and reliable specifications make it a viable option for designs operating in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (V(BR)GSS) for the J111-D26Z is 35 V.
The J111-D26Z operates between -55°C and 150°C (TJ).
The J111-D26Z is supplied in a TO-92-3 package.
The J111-D26Z is RoHS3 Compliant.