J109-D26Z The J109-D26Z is an N-Channel JFET from On Semiconductor designed for digital switching applications. It features a 25V drain-gate voltage and 625mW power dissipation.
Mfr Part #:

J109-D26Z

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The J109-D26Z is an N-Channel JFET from On Semiconductor designed for digital switching applications. It features a 25V drain-gate voltage and 625mW power dissipation.
✓ Total Stock: 53,742 pcs
$ Price Range: $0.99

J109-D26Z Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
34,955 pcs
34955 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
17,020 pcs
17020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,767 pcs
1767 pcs On Request 1 On Request On Request On Request On Request On Request

J109-D26Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
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Operating Temperature
Power
Resistance
Supplier Device Package
Tape & Reel
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J109-D26Z Description

Short technical summary and product information.

The J109-D26Z is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by On Semiconductor. This device is specifically designed for digital switching applications where very low on-resistance is a critical requirement.

 

Key electrical specifications include a maximum drain-gate voltage of 25V and a maximum gate-source voltage of -25V. The zero-gate voltage drain current (IDSS) is 40mA at 15V, and the drain-source on-resistance (RDS(on)) is a maximum of 12 Ohms under specific test conditions. The device offers a maximum power dissipation of 625mW.

 

This JFET operates within a junction temperature range of -55°C to 150°C. It is housed in a through-hole TO-92-3 package, making it suitable for various circuit board mounting needs. The J109-D26Z is RoHS3 compliant, indicating adherence to certain environmental standards.

 

This component is sourced from Process 58 and is suitable for applications demanding efficient switching with minimal resistance.

J109-D26Z Quick Information

Product Type: JFET
Canonical Name: J109-D26Z N-Channel JFET
Subcategory: JFET

J109-D26Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

J109-D26Z Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

J109-D26Z Features

  • N-Channel JFET for digital switching.
  • 25V drain-gate voltage rating.
  • 625mW maximum power dissipation.
  • TO-92-3 through-hole package.
  • RoHS3 compliant.

J109-D26Z Applications

  • Used in RF switching circuits
  • Suitable for low-noise amplification
  • Ideal for high input impedance applications
  • Applicable in electronic switching modules

J109-D26Z FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-gate voltage for the J109-D26Z?

The drain-gate voltage for the J109-D26Z is 25V.

What is the maximum power dissipation of the J109-D26Z?

The maximum power dissipation of the J109-D26Z is 625mW.

What is the operating temperature range for the J109-D26Z?

The operating temperature range for the J109-D26Z is -55°C to 150°C (TJ).

What package type is the J109-D26Z available in?

The J109-D26Z is available in a TO-226-3, TO-92-3 (TO-226AA) Formed Leads package.

What is the RoHS status of the J109-D26Z?

The J109-D26Z is RoHS3 Compliant.

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