| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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34,955 pcs
|
34955 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
17,020 pcs
|
17020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,767 pcs
|
1767 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The J109-D26Z is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by On Semiconductor. This device is specifically designed for digital switching applications where very low on-resistance is a critical requirement.
Key electrical specifications include a maximum drain-gate voltage of 25V and a maximum gate-source voltage of -25V. The zero-gate voltage drain current (IDSS) is 40mA at 15V, and the drain-source on-resistance (RDS(on)) is a maximum of 12 Ohms under specific test conditions. The device offers a maximum power dissipation of 625mW.
This JFET operates within a junction temperature range of -55°C to 150°C. It is housed in a through-hole TO-92-3 package, making it suitable for various circuit board mounting needs. The J109-D26Z is RoHS3 compliant, indicating adherence to certain environmental standards.
This component is sourced from Process 58 and is suitable for applications demanding efficient switching with minimal resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-gate voltage for the J109-D26Z is 25V.
The maximum power dissipation of the J109-D26Z is 625mW.
The operating temperature range for the J109-D26Z is -55°C to 150°C (TJ).
The J109-D26Z is available in a TO-226-3, TO-92-3 (TO-226AA) Formed Leads package.
The J109-D26Z is RoHS3 Compliant.