| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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23,239 pcs
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23239 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,866 pcs
|
3866 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor J109 is an N-Channel Junction Field-Effect Transistor (JFET) designed for digital switching applications requiring very low on-resistance. It operates with a drain-gate voltage of up to 25V and a gate-source voltage of -25V.
This JFET offers a maximum power dissipation of 625 mW at 25°C and has a junction-to-ambient thermal resistance of 200 °C/W. The zero-gate voltage drain current (IDSS) is 40 mA at 15V, and the drain-source on-resistance (RDS(on)) is a maximum of 12 Ohms under specific test conditions.
The J109 is housed in a TO-92-3 package, suitable for through-hole mounting. Its operating temperature range is from -55°C to 150°C (TJ). Key electrical characteristics include a gate-source cut-off voltage (VGS(off)) between -2.0V and -6.0V, and various capacitance values such as Cdg(on) of 85 pF and Csg(off) of 15 pF.
This device is sourced from Process 58 and is Pb-Free. It is suitable for applications where low on-resistance is a critical design parameter.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-gate voltage for the J109 is 25V.
The typical drain current at zero gate voltage (IDSS) for the J109 is 40 mA at 15V.
The maximum on-resistance (RDS(on)) for the J109 is 12 Ohms.
The J109 operates between -55°C and 150°C (TJ).
The J109 is supplied in a TO-92-3 package.