| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,216 pcs
|
6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXYS IXYH30N450HV is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the XPT™ series. It is designed for demanding power applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 4500V and a continuous collector current of 60A. The transistor can handle pulsed currents up to 200A. Its on-state voltage (Vce(on)) is a maximum of 3.9V at 15V gate-emitter voltage and 30A collector current, with a maximum power dissipation of 430W. The gate charge is specified at 88 nC.
This IGBT operates within a wide temperature range of -55°C to 150°C (TJ). It is housed in a TO-247HV package and utilizes a Through Hole mounting type, making it suitable for robust power circuit designs.
The IXYH30N450HV is RoHS3 compliant and REACH unaffected, indicating adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 4500 V.
The maximum continuous collector current is 60 A.
The maximum power dissipation is 430 W.
The operating temperature range is -55°C to 150°C (TJ).
The IGBT is supplied in a TO-247HV package.
It is mounted using the Through Hole method.