| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
147 pcs
|
147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXYS IXXX110N65B4H1 is a single IGBT transistor from IXYS, categorized under Transistors - IGBTs - Single. This component is rated for 650V and can handle up to 240A of current, with a significant power dissipation of 880W. It features a PT IGBT type and a standard Through Hole mounting style, utilizing the PLUS247™-3 package.
Key electrical characteristics include a Vce(on) maximum of 2.1V at 15V and 110A, a gate charge of 183 nC, and switching energies of 2.2mJ (on) and 1.05mJ (off). The transistor also has a Td(on)/Tf(on) of 38ns/156ns and a reverse recovery time of 100 ns. It operates within a temperature range of -55°C to 175°C (TJ).
This device is suitable for applications requiring high voltage and current switching capabilities. Its robust construction and specifications make it a reliable choice for power electronics designs. The RoHS3 compliance indicates adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IXXX110N65B4H1 IGBT has a voltage rating of 650 V.
The IXXX110N65B4H1 can handle a continuous current of 240 A.
The power dissipation for the IXXX110N65B4H1 is 880 W.
The IXXX110N65B4H1 is mounted using the Through Hole method.
The operating temperature range for the IXXX110N65B4H1 is -55°C to 175°C (TJ).