IXXN110N65C4H1 The IXYS IXXN110N65C4H1 is an IGBT module with a 650V collector-emitter breakdown voltage and a maximum collector current of 210A. It features a 750W maximum power rating and is designed for chassis mounting.
Mfr Part #:

IXXN110N65C4H1

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXXN110N65C4H1 is an IGBT module with a 650V collector-emitter breakdown voltage and a maximum collector current of 210A. It features a 750W maximum power rating and is designed for chassis mounting.
Total Stock: 1,300 pcs
$ Price Range: $0.99

IXXN110N65C4H1 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
300 pcs
300 pcs On Request 1 On Request On Request On Request On Request On Request

IXXN110N65C4H1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
IGBT Type
Input
Input Capacitance (Cies) @ Vce
Mounting Type
NTC Thermistor
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Vce(on) (Max) @ Vge, Ic
Voltage

IXXN110N65C4H1 Description

Short technical summary and product information.

This IXYS IXXN110N65C4H1 is a high-power IGBT module designed for demanding applications. It offers a robust 650V collector-emitter breakdown voltage and can handle a maximum collector current of 210A, with a maximum power dissipation of 750W.

 

The module operates within a wide temperature range of -55°C to 175°C (TJ), making it suitable for harsh environments. Its Vce(on) is a maximum of 2.35V at 15V Vge and 110A Ic. Input capacitance (Cies) is 3.69 nF at 25V, and the collector cutoff current is a maximum of 50 µA.

 

Designed for ease of integration, the IXXN110N65C4H1 utilizes a SOT-227B package and supports chassis mounting. The module is part of the XPT™, GenX4™ series, indicating advanced performance characteristics.

 

Compliance information includes RoHS3 compliance and REACH unaffected status. The MSL is rated at 1 (Unlimited).

IXXN110N65C4H1 Quick Information

Product Type: IGBT Module
Series: XPT™, GenX4™
Canonical Name: IXYS IXXN110N65C4H1 IGBT Module
Subcategory: Transistors - IGBTs - Modules

IXXN110N65C4H1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXXN110N65C4H1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXXN110N65C4H1 Features

  • 650V collector-emitter breakdown voltage.
  • 210A maximum collector current.
  • 750W maximum power dissipation.
  • Wide operating temperature range.
  • Chassis mount SOT-227B package.

IXXN110N65C4H1 Applications

  • Suitable for high-power switching.
  • Ideal for industrial power supplies.
  • Used in motor control systems.
  • Applicable in power factor correction.

IXXN110N65C4H1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the IXXN110N65C4H1?

The maximum collector current is 210 A.

What is the maximum collector-emitter voltage for the IXXN110N65C4H1?

The maximum collector-emitter breakdown voltage is 650 V.

What is the maximum power dissipation of the IXXN110N65C4H1?

The maximum power dissipation is 750 W.

What is the operating temperature range for this IGBT module?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the IXXN110N65C4H1 supplied in?

It is supplied in a SOT-227B package, specifically SOT-227-4, miniBLOC.

How is the IXXN110N65C4H1 mounted?

The module is designed for chassis mounting.

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