IXXH75N60C3D1 The IXYS IXXH75N60C3D1 is a high-performance IGBT transistor designed for demanding applications. It offers a 600V breakdown voltage and a continuous collector current of 150A.
Mfr Part #:

IXXH75N60C3D1

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXXH75N60C3D1 is a high-performance IGBT transistor designed for demanding applications. It offers a 600V breakdown voltage and a continuous collector current of 150A.
Total Stock: 1,322 pcs
$ Price Range: $0.99

IXXH75N60C3D1 Available from 2 distributors

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1,198 pcs
1198 pcs On Request 1 On Request On Request 18+ On Request On Request
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124 pcs
124 pcs On Request 1 On Request On Request 20+ On Request On Request

IXXH75N60C3D1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

IXXH75N60C3D1 Description

Short technical summary and product information.

The IXYS IXXH75N60C3D1 is a single IGBT transistor from the GenX3™, XPT™ series, designed for power electronics applications. It features a robust 600V collector-emitter breakdown voltage and a substantial 150A continuous collector current, with a pulsed current capability of 200A. The device can dissipate up to 750W of power.

 

Key electrical characteristics include a low Vce(on) of 2.3V at 15V and 60A, and typical switching times of 35ns turn-on and 90ns turn-off at 25°C. The switching energy is rated at 1.6mJ (on) and 800µJ (off), with a reverse recovery time of 25ns. The gate charge is 107 nC.

 

This IGBT is housed in a TO-247AD package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 175°C (TJ). The input type is standard, and the IGBT type is PT.

 

The IXXH75N60C3D1 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. It is designed for applications requiring high voltage and current handling capabilities in power conversion and control systems.

IXXH75N60C3D1 Quick Information

Product Type: IGBT Transistor
Series: GenX3™, XPT™
Canonical Name: IXXH75N60C3D1 IGBT
Subcategory: IGBT

IXXH75N60C3D1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXXH75N60C3D1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXXH75N60C3D1 Features

  • 600V collector-emitter breakdown voltage.
  • 150A continuous collector current.
  • 750W maximum power dissipation.
  • TO-247AD package for through-hole mounting.
  • Wide operating temperature range.

IXXH75N60C3D1 Applications

  • Ideal for high-voltage power supplies.
  • Suitable for motor control circuits.
  • Used in industrial power inverters.
  • Applicable to renewable energy systems.

IXXH75N60C3D1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage for the IXXH75N60C3D1?

The maximum collector-emitter breakdown voltage is 600V.

What is the continuous collector current rating?

The continuous collector current (Ic) is 150A.

What is the maximum power dissipation?

The maximum power dissipation for this IGBT is 750W.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What type of package is the IXXH75N60C3D1 in?

It is supplied in a TO-247AD package.

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