IXXH75N60B3D1 The IXYS IXXH75N60B3D1 is a high-power IGBT transistor designed for demanding applications. It offers a 600V voltage rating and 160A current capability.
Mfr Part #:

IXXH75N60B3D1

Available from 4 distributors
Mfr Name: IXYS
IXYS
The IXYS IXXH75N60B3D1 is a high-power IGBT transistor designed for demanding applications. It offers a 600V voltage rating and 160A current capability.
Total Stock: 9,017 pcs
$ Price Range: $0.99

IXXH75N60B3D1 Available from 4 distributors

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IXXH75N60B3D1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Brand
Current
Failure Rate
Gate Charge
IGBT Type
Input Type
Mounting Type
Power
Product Type
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Technology
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

IXXH75N60B3D1 Description

Short technical summary and product information.

The IXYS IXXH75N60B3D1 is a single IGBT transistor from the XPT series, designed for robust performance in power electronics applications. It features a 600V collector-emitter voltage and a continuous collector current of 160A, with a power dissipation of 750W.

 

Key electrical characteristics include a low Vce(on) of 1.85V at 15V Vge and 60A Ic, and switching times of 35ns turn-on and 118ns turn-off. The transistor also exhibits a reverse recovery time of 25ns and a gate charge of 107nC.

 

Packaged in a TO-247-3 (TO-247AD) through-hole configuration, this device is suitable for applications requiring efficient power switching. The standard package is supplied in a tube.

 

This IGBT transistor is RoHS3 compliant and has a Moisture Sensitivity Level of 1.

IXXH75N60B3D1 Quick Information

Product Type: IGBT Transistor
Series: Ixxh75n60
Canonical Name: IXYS IXXH75N60B3D1 IGBT Transistor
Subcategory: IGBTs

IXXH75N60B3D1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXXH75N60B3D1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXXH75N60B3D1 Features

  • 600V collector-emitter voltage rating.
  • 160A continuous collector current.
  • 750W power dissipation capability.
  • TO-247-3 through-hole package.
  • Fast switching times for efficiency.

IXXH75N60B3D1 Applications

  • Suitable for high-power switching.
  • Used in power supply circuits.
  • Ideal for motor control.
  • Applicable in industrial automation.

IXXH75N60B3D1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum voltage rating for the IXXH75N60B3D1 IGBT transistor?

The IXXH75N60B3D1 IGBT transistor has a maximum voltage rating of 600 V.

What is the continuous collector current for the IXXH75N60B3D1?

The continuous collector current for the IXXH75N60B3D1 is 160 A.

What is the power dissipation of the IXXH75N60B3D1?

The power dissipation of the IXXH75N60B3D1 is 750 W.

What package type is the IXXH75N60B3D1 available in?

The IXXH75N60B3D1 is available in a TO-247-3 package.

How is the IXXH75N60B3D1 mounted?

The IXXH75N60B3D1 is mounted using the through-hole method.

What is the RoHS status of the IXXH75N60B3D1?

The IXXH75N60B3D1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IXXH75N60B3D1?

The Moisture Sensitivity Level (MSL) for the IXXH75N60B3D1 is 1 Unlimited.

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