| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,217 pcs
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3217 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
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350 pcs
|
350 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The IXYS IXXH75N60B3D1 is a single IGBT transistor from the XPT series, designed for robust performance in power electronics applications. It features a 600V collector-emitter voltage and a continuous collector current of 160A, with a power dissipation of 750W.
Key electrical characteristics include a low Vce(on) of 1.85V at 15V Vge and 60A Ic, and switching times of 35ns turn-on and 118ns turn-off. The transistor also exhibits a reverse recovery time of 25ns and a gate charge of 107nC.
Packaged in a TO-247-3 (TO-247AD) through-hole configuration, this device is suitable for applications requiring efficient power switching. The standard package is supplied in a tube.
This IGBT transistor is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IXXH75N60B3D1 IGBT transistor has a maximum voltage rating of 600 V.
The continuous collector current for the IXXH75N60B3D1 is 160 A.
The power dissipation of the IXXH75N60B3D1 is 750 W.
The IXXH75N60B3D1 is available in a TO-247-3 package.
The IXXH75N60B3D1 is mounted using the through-hole method.
The IXXH75N60B3D1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IXXH75N60B3D1 is 1 Unlimited.