IXXH60N65B4H1 The IXYS IXXH60N65B4H1 is a TRENCH IGBT GENX4 XPT transistor with a 650V rating. It offers a continuous collector current of 116A and a power dissipation of 380W.
Mfr Part #:

IXXH60N65B4H1

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXXH60N65B4H1 is a TRENCH IGBT GENX4 XPT transistor with a 650V rating. It offers a continuous collector current of 116A and a power dissipation of 380W.
Total Stock: 2 pcs
$ Price Range: $0.99

IXXH60N65B4H1 Available from 1 distributor

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IXXH60N65B4H1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Continuous Collector Current (Maximum)
Current
Gate Charge
Gate-Emitter Leakage Current
Gate-Emitter Voltage
IGBT Type
Input Type
Mounting Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Reverse Recovery Time (trr)
Supplier Device Package
Supplier Package
Switching Energy
Switching Energy (Maximum @ off)
Td (on
Technology
Test Condition
Tradename
Turn-Off Delay Time
Vce(on) (Max) @ Vge, Ic
Voltage

IXXH60N65B4H1 Description

Short technical summary and product information.

The IXYS IXXH60N65B4H1 is a high-performance IGBT transistor designed for power electronic applications. It features a robust 650V collector-emitter voltage and a substantial 116A continuous collector current at 25°C, with a maximum power dissipation of 380W.

 

This device utilizes TRENCH IGBT GENX4 XPT technology, offering efficient switching characteristics with a turn-on delay of 37ns and a turn-off delay of 145ns. The collector-emitter saturation voltage is 2V at 15V gate-emitter voltage and 60A collector current. It also has a gate charge of 95 nC and a reverse recovery time of 150 ns.

 

The IXXH60N65B4H1 operates within a wide temperature range of -55°C to 175°C. It is packaged in a standard TO-247AD through-hole configuration, making it suitable for various power module designs.

 

This IGBT transistor is suitable for applications requiring high voltage and current handling capabilities, such as power supplies, motor drives, and industrial automation.

IXXH60N65B4H1 Quick Information

Product Type: IGBT Transistor
Series: Ixxh60n65
Canonical Name: IXYS IXXH60N65B4H1 IGBT Transistor
Subcategory: IGBTs

IXXH60N65B4H1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXXH60N65B4H1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXXH60N65B4H1 Features

  • 650V collector-emitter voltage rating.
  • 116A continuous collector current.
  • 380W maximum power dissipation.
  • TO-247AD package for through-hole mounting.
  • Wide -55°C to 175°C operating temperature.

IXXH60N65B4H1 Applications

  • Ideal for power supply circuits.
  • Suitable for motor control applications.
  • Used in industrial automation systems.
  • Applicable in power switching designs.

IXXH60N65B4H1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the IXXH60N65B4H1?

The maximum collector-emitter voltage is 650V.

What is the continuous collector current of the IXXH60N65B4H1?

The continuous collector current is 116A at 25°C.

What is the power dissipation of the IXXH60N65B4H1?

The power dissipation is 380W.

What is the operating temperature range for this IGBT transistor?

The operating temperature range is -55°C to 175°C.

What package type is the IXXH60N65B4H1 supplied in?

The IXXH60N65B4H1 is supplied in a TO-247AD package.

What is the collector-emitter saturation voltage?

The collector-emitter saturation voltage is 2V at 15V gate-emitter voltage and 60A collector current.

What is the turn-on delay time?

The turn-on delay time is 37ns.

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