| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
773 pcs
|
773 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
| Input Type | |
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| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXYS IXXH30N60B3D1 is a single IGBT transistor designed for power electronic applications. It features a maximum collector-emitter breakdown voltage of 600V and can handle a continuous collector current of up to 60A.
With a maximum power dissipation of 270W, this IGBT is suitable for demanding applications. Key electrical characteristics include a typical saturation voltage (Vce(on)) of 1.85V at 15V gate voltage and 24A collector current. Switching characteristics show a typical turn-on time of 23ns and turn-off time of 97ns at 25°C, with a switching energy of 550µJ (on) and 500µJ (off).
The device operates within a temperature range of -55°C to 175°C (TJ). It is packaged in a TO-247-3 configuration, designed for through-hole mounting. The standard input type and PT IGBT type make it a versatile component for power conversion and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 600V.
The maximum continuous collector current is 60A.
The maximum power dissipation is 270W.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-247-3 package.