IXTY01N100 The IXYS IXTY01N100 is an N-Channel MOSFET designed for high voltage applications. It offers a 1000V drain-to-source voltage and a continuous drain current of 100mA.
Mfr Part #:

IXTY01N100

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTY01N100 is an N-Channel MOSFET designed for high voltage applications. It offers a 1000V drain-to-source voltage and a continuous drain current of 100mA.
Total Stock: 10,000 pcs
$ Price Range: $0.99

IXTY01N100 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request 19+ On Request On Request

IXTY01N100 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTY01N100 Description

Short technical summary and product information.

The IXYS IXTY01N100 is a high-voltage N-Channel Power MOSFET. It features a maximum drain-to-source voltage (Vdss) of 1000V and a continuous drain current (Id25) of 100mA at 25°C.

 

This MOSFET has a maximum on-resistance (Rds(on)) of 80 Ohms at 100mA and 10V gate drive. The operating temperature range is from -55°C to 150°C (TJ), with a maximum junction temperature of 150°C.

 

Packaged in a TO-252AA surface-mount package, the IXTY01N100 is suitable for applications requiring space savings and high power density. Its features include fast switching times and avalanche rating, making it suitable for level shifting, triggers, solid-state relays, and current regulators.

 

Key electrical characteristics include an input capacitance (Ciss) of 54pF, output capacitance (Coss) of 6.9pF, and reverse transfer capacitance (Crss) of 2.0pF. The device also includes a source-drain diode with a typical forward voltage (VSD) of 1.8V and a reverse recovery time (trr) of 1.5µs.

IXTY01N100 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTY01N100 N-Channel 1000V 100mA TO-252AA Power MOSFET
Subcategory: N-Channel

IXTY01N100 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTY01N100 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTY01N100 Features

  • 1000V drain-to-source voltage rating.
  • 100mA continuous drain current.
  • Maximum 80 Ohm on-resistance.
  • TO-252AA surface mount package.
  • Wide -55°C to 150°C operating temperature.

IXTY01N100 Applications

  • Suitable for level shifting.
  • Used in trigger circuits.
  • Applicable for solid-state relays.
  • Designed for current regulators.

IXTY01N100 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IXTY01N100?

The maximum drain-to-source voltage (Vdss) for the IXTY01N100 is 1000 V.

What is the continuous drain current at 25°C for the IXTY01N100?

The continuous drain current (Id25) at 25°C for the IXTY01N100 is 100 mA.

What is the maximum on-resistance of the IXTY01N100?

The maximum on-resistance (Rds(on)) for the IXTY01N100 is 80 Ohms at 100mA drain current and 10V gate voltage.

What is the operating temperature range for the IXTY01N100?

The operating temperature range (TJ) for the IXTY01N100 is -55°C to 150°C.

What package type is the IXTY01N100 available in?

The IXTY01N100 is available in a TO-252AA surface mount package.

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