| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 1133+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXTU2N80P is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current of 2A at a case temperature (Tc). It offers a low on-resistance of 6 Ohms at 1A drain current and 10V gate-source voltage. The gate charge (Qg) is 10.6 nC maximum at 10V, and the input capacitance (Ciss) is 440 pF maximum at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W (Tc). It is suitable for through-hole mounting and comes in a TO-251AA package with short leads, also known as IPak.
The IXTU2N80P utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 5.5V maximum at 50µA. The maximum gate-source voltage (Vgs) is ±30V, and the recommended drive voltage is 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IXTU2N80P is 800V.
The continuous drain current is 2A.
The Rds On is a maximum of 6 Ohms at 1A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The IXTU2N80P is supplied in a TO-251AA package.
The IXTU2N80P is designed for through-hole mounting.