| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTT96N20P is an N-Channel Power MOSFET with a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 96A at 25°C.
It offers a low on-state resistance (Rds(on)) of 24mOhm at 500mA and 10V gate drive voltage, with a maximum gate-source voltage of ±20V. The device has a gate threshold voltage (Vgs(th)) of 5V at 250µA.
Packaged in a TO-268-3, D³Pak (2 Leads + Tab), TO-268AA surface mount package, this MOSFET operates within a temperature range of -55°C to 175°C (TJ). It has an input capacitance (Ciss) of 4800pF at 25V and a gate charge (Qg) of 145nC at 10V.
The MOSFET is suitable for applications requiring high power density and efficient switching, with a maximum power dissipation of 600W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current (Id) is 96A at 25°C.
The maximum Rds(on) is 24mOhm when measured at 500mA drain current and 10V gate voltage.
It is an N-Channel MOSFET.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package.
The IXTT96N20P is a surface mount device.