| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
221 pcs
|
221 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This IXYS IXTT90P10P is a P-Channel MOSFET designed for power switching applications. It offers a high drain-source voltage rating of 100V and can handle a continuous drain current of up to 90A at a case temperature (Tc).
The MOSFET exhibits a low on-resistance (Rds On) of 25mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 45A. Key electrical parameters include a gate charge (Qg) of 120nC and an input capacitance (Ciss) of 5800pF.
Packaged in a surface-mount TO-268AA (TO-268-3, D³Pak) configuration, this device is suitable for applications requiring efficient power handling. The operating temperature range is -55°C to 150°C (TJ).
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is rated at 90A.
The Rds On is a maximum of 25mOhm at 45A and 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-268AA package, also known as TO-268-3, D³Pak.
The RoHS status is listed as RoHS3 Compliant.