| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The IXYS IXTT16N50D2 is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Tc) of 16A. It offers a low on-resistance (Rds On) of 240mOhm at 8A and 0Vgs, making it suitable for power switching applications.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 695W (Tc). It features a depletion mode operation and is constructed using MOSFET (Metal Oxide) technology.
The device is available in a TO-268AA package, designed for surface mounting. It has an input capacitance (Ciss) of 5250 pF at 25V and a gate charge (Qg) of 199 nC at 5V. The maximum gate-source voltage (Vgs) is ±20V.
Environmental compliance includes RoHS3 compliance and an MSL of 1 Unlimited. REACH status is listed as REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current rating is 16A at the case temperature (Tc).
The operating temperature range is -55°C to 150°C (TJ).
The Rds On is a maximum of 240mOhm when the drain current is 8A and the gate-source voltage is 0V.
The device is supplied in a TO-268AA package, designed for surface mounting.
Yes, the RoHS status is RoHS3 Compliant.