IXTT10P60 The IXYS IXTT10P60 is a P-Channel MOSFET with a 600V drain-to-source voltage and 10A continuous current rating. It is designed for surface mount applications.
Mfr Part #:

IXTT10P60

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXYS IXTT10P60 is a P-Channel MOSFET with a 600V drain-to-source voltage and 10A continuous current rating. It is designed for surface mount applications.
Total Stock: 35 pcs
$ Price Range: $0.99

IXTT10P60 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21 pcs
21 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
14 pcs
14 pcs On Request 1 On Request On Request On Request On Request On Request

IXTT10P60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTT10P60 Description

Short technical summary and product information.

The IXYS IXTT10P60 is a P-Channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Tc) of 10A. The MOSFET has a low on-resistance (Rds On) of 1 Ohm maximum at 5A and 10V gate-source voltage.

 

This device operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 4700pF at 25V and a gate charge (Qg) of 160nC at 10V. The gate threshold voltage (Vgs(th)) is 5V maximum at 250µA, with a maximum gate-source voltage of ±20V.

 

The IXTT10P60 utilizes MOSFET (Metal Oxide) technology and is housed in a TO-268AA package, suitable for surface mounting. Its high power dissipation capability of 300W (Tc) makes it suitable for demanding applications.

IXTT10P60 Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXTT10P60 P-Channel MOSFET
Subcategory: P-Channel

IXTT10P60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTT10P60 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTT10P60 Features

  • 600V drain-to-source voltage rating.
  • 10A continuous drain current.
  • 1 Ohm maximum on-resistance.
  • 4700pF input capacitance.
  • Surface mount TO-268AA package.

IXTT10P60 Applications

  • Suitable for high-voltage power switching applications.
  • Used in motor control and inverter circuits.
  • Ideal for industrial power supply regulation.
  • Applicable in renewable energy conversion systems.

IXTT10P60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IXTT10P60?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the IXTT10P60?

The continuous drain current rating is 10A (Tc).

What is the maximum on-resistance (Rds On) for the IXTT10P60?

The maximum on-resistance is 1 Ohm at 5A and 10V.

What is the operating temperature range for the IXTT10P60?

The operating temperature range is -55°C to 150°C (TJ).

What type of package is the IXTT10P60 in?

The IXTT10P60 is in a TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package.

Is the IXTT10P60 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IXTT10P60?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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