IXTQ88N30P The IXTQ88N30P is an N-Channel MOSFET from IXYS with a 300V drain-source voltage and 88A continuous current rating. It is housed in a TO-3P package.
Mfr Part #:

IXTQ88N30P

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXTQ88N30P is an N-Channel MOSFET from IXYS with a 300V drain-source voltage and 88A continuous current rating. It is housed in a TO-3P package.
Total Stock: 3,100 pcs
$ Price Range: $0.99

IXTQ88N30P Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,600 pcs
1600 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,500 pcs
1500 pcs On Request 1 On Request On Request 21+ On Request On Request

IXTQ88N30P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTQ88N30P Description

Short technical summary and product information.

The IXTQ88N30P is a high-performance N-Channel MOSFET manufactured by IXYS. It is designed for demanding applications requiring a 300V drain-to-source breakdown voltage and a continuous current capability of 88A at a case temperature.

 

Key electrical characteristics include a low on-resistance of 40mOhm at 44A and 10V gate drive, a maximum gate charge of 180nC, and an input capacitance of 6300pF. The gate threshold voltage is 5V at 250µA, and the maximum gate-source voltage is ±20V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It features a TO-3P package for through-hole mounting, providing robust thermal performance with a maximum power dissipation of 600W at the case temperature.

 

The IXTQ88N30P is suitable for various power switching applications where high voltage and current handling are essential.

IXTQ88N30P Quick Information

Product Type: MOSFET
Canonical Name: IXTQ88N30P N-Channel MOSFET
Subcategory: Single

IXTQ88N30P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTQ88N30P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTQ88N30P Features

  • 300V drain-source voltage rating.
  • 88A continuous current capability.
  • Low 40mOhm on-resistance.
  • TO-3P through-hole package.
  • Wide -55°C to 150°C operating temperature.

IXTQ88N30P Applications

  • High-voltage power switching.
  • Industrial power supplies.
  • Motor control circuits.
  • DC-DC converters.

IXTQ88N30P FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IXTQ88N30P?

The maximum drain-source voltage is 300V.

What is the continuous current rating of the IXTQ88N30P?

The continuous current rating is 88A.

What is the on-resistance of the IXTQ88N30P?

The maximum on-resistance is 40mOhm at 44A and 10V gate drive.

What is the package type for the IXTQ88N30P?

The package type is TO-3P-3, SC-65-3.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

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