IXTQ82N25P The IXTQ82N25P is an N-Channel MOSFET from IXYS, designed for high-power applications. It features a 250V drain-source breakdown voltage and a continuous drain current of 82A.
Mfr Part #:

IXTQ82N25P

Available from 4 distributors
Mfr Name: IXYS
IXYS
The IXTQ82N25P is an N-Channel MOSFET from IXYS, designed for high-power applications. It features a 250V drain-source breakdown voltage and a continuous drain current of 82A.
Total Stock: 10,248 pcs
$ Price Range: $0.99

IXTQ82N25P Available from 4 distributors

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Non-Authorised

IXTQ82N25P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXTQ82N25P Description

Short technical summary and product information.

The IXTQ82N25P is a high-performance N-Channel MOSFET manufactured by IXYS Integrated Circuits Division. This component is designed for demanding applications requiring robust power handling capabilities. It offers a drain-source breakdown voltage of 250V and can handle a continuous drain current of 82A at a case temperature.

 

Key electrical characteristics include a maximum on-resistance of 35mOhm at 41A and 10V, and a gate charge of 142nC. The MOSFET operates within a wide temperature range of -55°C to 150°C (TJ), making it suitable for various environmental conditions. It is packaged in a TO-3P-3 case and utilizes through-hole mounting.

 

This MOSFET is suitable for power switching and amplification circuits where high voltage and current capabilities are essential. Its construction and specifications make it a reliable choice for industrial and automotive applications requiring efficient power management.

IXTQ82N25P Quick Information

Product Type: MOSFET
Series: IXTQ82N25P
Canonical Name: IXTQ82N25P N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

IXTQ82N25P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXTQ82N25P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXTQ82N25P Features

  • N-Channel MOSFET with 250V breakdown voltage.
  • High continuous drain current of 82A.
  • Low on-resistance of 35mOhm at 41A.
  • Wide operating temperature range of -55°C to 150°C.
  • TO-3P-3 package for through-hole mounting.

IXTQ82N25P Applications

  • Suitable for high-power switching.
  • Used in power supply circuits.
  • Ideal for motor control applications.
  • Applicable in industrial automation.

IXTQ82N25P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IXTQ82N25P?

The drain-source breakdown voltage is 250 V.

What is the maximum continuous drain current for the IXTQ82N25P?

The maximum continuous drain current is 82 A.

What is the maximum power dissipation of the IXTQ82N25P?

The maximum power dissipation is 500 W.

What is the operating temperature range for the IXTQ82N25P?

The operating temperature range is -55°C to 150°C.

What package type is the IXTQ82N25P supplied in?

The IXTQ82N25P is supplied in a TO-3P-3, SC-65-3 package.

How is the IXTQ82N25P mounted?

The IXTQ82N25P is mounted using the through-hole method.

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